Size dependence of the measured hardness,9–14 i.e., a decrease in hardness is observed with increasing load. Nanoindentation data in the literature show an indentation Hardness values obtained from most of the existing Thus, hardness and Young’s modulus values can beĭetermined from knowledge of the elastic contact area.8
These techniques rely on theįact that displacement recovery during unloading is largelyĮlastic. That continuously measure load and displacement during indentation, with resolutions in the mN and nm regimes, hasĪllowed the mechanical response of thin films to be determined much more accurately. The recent development of nanoindentation instruments McHargue, and Zinkle7 obtained values of 24 GPa and 300–ģ50 GPa while Stone and co-workers3 reported 31 GPa andĥ50 GPa for hardness and Young’s modulus, respectively. Present address: Tixon AB, Svedengatan 2, S-582 73 Linköping, Sweden. Stoichiometric polycrystalline TiN.3–6 Low hardness values Range from 20 to 50 and 400 to 650 GPa, respectively, for Reported properties of TiN layers depend strongly on deposition parameters controlling film density, stoichiometry, microstructure, defect structure, residual stress, and texture.1,2įor example, reported hardness and Young’s modulus values TiN films, which are often uncharacterized, vary widely. This is due both to the difficulty inįabricating stoichiometric bulk TiN and the fact that the microstructure and microchemistry of typical polycrystalline Nevertheless,įundamental knowledge regarding the physical properties of More recently, TiN has also found applications as diffusion barriers in integrated circuits. More than 20 years, as wear-protecting coatings on mechanical components such as cutting tools as well as for decorative purposes. TiN thin films are extensively used, and have been for Young’s moduliįor annealed samples, calculated from the elastic unloading curves, were found to be 307615 GPaįor MgO ~001! and 445628 GPa for TiN ~001! and TiN ~111!, respectively. Obtained from ~011! layers exhibited large scatter due to surface roughness effects. TiN~001! and ~111! films had hardnesses of 2060. 100 nm where substrate effects were apparent. To be independent of load except at displacements. After a 30 s postdeposition anneal at 1000 ☌, however, hardness was found Measured hardness values, which decreased with increasing loads, increased in the order All TiN films displayed a completely elastic response at low loads. After a 1 h anneal atĨ00 ☌, corresponding to the thermal treatment received prior to film growth, the measured hardness Identical hardness values as determined using the Oliver and Pharr method. All three orientations of MgO substrates, as-received, exhibited Were carried out using a three-sided pyramidal Berkovich diamond indentor tip operated at loads Pole figures, high-resolution XRD analyses, and Auger electron spectroscopy was used to show thatĪll TiN films were single crystals with N/Ti ratios of 1.060.05. Overlayers, grown simultaneously by dc magnetron sputter deposition at 700 ☌ in a mixed N2 andĪr discharge, were investigated using nanoindentation.
The mechanical properties of ~001!-, ~011!-, and ~111!-oriented MgO wafers and 1-mm-thick TiN ~Received 22 July 1996 accepted for publication 27 August 1996! Thin Film Physics Division, Department of Physics, Linköping University, S-581 83 Linköping, Sweden Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 Thin Film Physics Division, Department of Physics, Linköping University, S-581 83 Linköping, Swedenĭivision of Engineering Materials, Department of Mechanical Engineering, Linköping University,ĭepartment of Materials Science, the Coordinated Science Laboratory, and the Materials Research Nanoindentation studies of single-crystal (001)-, (011)-, and (111)-oriented Superconducting properties and crystal structures of singlecrystal niobium nitride thin films deposited at ambient Low temperature TiN coating of Zinalco by sputteringĪIP Conf.
Study of CoCrPt/NiAl thin films on (001) MgO single crystalsĪppl. Ti/MgO superlattices epitaxially grown on sapphire (00.1) and MgO(001) substratesĪppl. Nanoindentation studies of singlecrystal (001), (011), and (111)oriented TiN layers on
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